Radiation damage in npn Si transistors due to high-temperature gamma-ray and 1-MeV electron irradiation

Ohyama, HidenoriHidenoriOhyamaHirao, T.T.HiraoSimoen, EddyEddySimoenClaeys, CorCorClaeysNakabayashi, M.M.NakabayashiOnoda, S.S.Onoda2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6666Radiation damage in npn Si transistors due to high-temperature gamma-ray and 1-MeV electron irradiationProceedings paper