Afanasiev, ValeriValeriAfanasievStesmans, AndreAndreStesmansDelabie, AnneliesAnneliesDelabieBellenger, FlorenceFlorenceBellengerHoussa, MichelMichelHoussaLieten, RubenRubenLietenMerckling, ClementClementMercklingPenaud, JulienJulienPenaudBrunco, DavidDavidBruncoMeuris, MarcMarcMeuris2021-10-172021-10-1720081369-8001https://imec-publications.be/handle/20.500.12860/13290Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagramsJournal article