Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?

Yu, HaoHaoYuSchaekers, MarcMarcSchaekersRosseel, ErikErikRosseelEveraert, Jean-LucJean-LucEveraertEyben, PierrePierreEybenChiarella, ThomasThomasChiarellaMerckling, ClementClementMercklingAgarwal Kumar, TarunTarunAgarwal KumarPourtois, GeoffreyGeoffreyPourtoisHikavyy, AndriyAndriyHikavyyKubicek, StefanStefanKubicekWitters, LiesbethLiesbethWittersSibaja-Hernandez, ArturoArturoSibaja-HernandezMitard, JeromeJeromeMitardWaldron, NiamhNiamhWaldronChew, Soon AikSoon AikChewDemuynck, StevenStevenDemuynckHoriguchi, NaotoNaotoHoriguchiBarla, KathyKathyBarlaThean, AaronAaronTheanMocuta, AndaAndaMocutaMocuta, DanDanMocutaCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe Meyer2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27642Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?Proceedings paper