Crupi, F.F.CrupiMagnone, P.P.MagnoneSimoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaPantisano, LuigiLuigiPantisanoGiusi, G.G.GiusiPace, C.C.PaceClaeys, CorCorClaeys2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15145The role of the interfaces in the 1/f noise of MOSFETs with high-k gate stacksProceedings paper