Impact of duty factor, stress stimuli, and gate drive strength on gate delay degradation with an atomistic trap-based BTI model

Kukner, HalilHalilKuknerWeckx, PieterPieterWeckxRaghavan, PraveenPraveenRaghavanKaczer, BenBenKaczerCatthoor, FranckyFranckyCatthoorVan der Perre, LiesbetLiesbetVan der PerreLauwereins, RudyRudyLauwereinsGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20958Impact of duty factor, stress stimuli, and gate drive strength on gate delay degradation with an atomistic trap-based BTI modelProceedings paper