Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers

Baptista Junior, BrazBrazBaptista JuniorCano de Andrade, Maria GloriaMaria GloriaCano de Andradede Oliveira Bergamim, Luis FelipeLuis Felipede Oliveira BergamimNogueira, Carlos RobertoCarlos RobertoNogueiraAbud, Renan BaptistaRenan BaptistaAbudSimoen, EddyEddySimoen2023-06-132023-02-272023-06-132022naWOS:000925270200073https://imec-publications.be/handle/20.500.12860/41192Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafersProceedings paper10.1109/LAEDC54796.2022.9908239978-1-6654-9767-1WOS:000925270200073