A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors

Sibaja-Hernandez, ArturoArturoSibaja-HernandezDecoutere, StefaanStefaanDecoutereMaes, HermanHermanMaes2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11202A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistorsJournal article