Vandooren, AnneAnneVandoorenIacovo, SerenaSerenaIacovoBrissonneau, VincentVincentBrissonneauChiarella, ThomasThomasChiarellaCullen, C.C.CullenCasey, D.D.CaseyRengo, G.G.RengoKhazaka, R.R.KhazakaEyben, PierrePierreEybenChannam, Venkat Sunil KumarVenkat Sunil KumarChannamGanguly, JishnuJishnuGangulyStiers, KarenKarenStiersSheng, CassieCassieShengToledo de Carvalho Cavalcante, CamilaCamilaToledo de Carvalho CavalcanteHosseini, MaryamMaryamHosseiniBatuk, DmitryDmitryBatukPeng, A.A.PengZhou, X.X.ZhouSarkar, RitamRitamSarkarVeloso, AnabelaAnabelaVelosoMingardi, AndreaAndreaMingardiSarkar, Sujan KumarSujan KumarSarkarSaroj, Rajendra KumarRajendra KumarSarojChukka, RamiRamiChukkaGeorgieva, VioletaVioletaGeorgievaLoo, RogerRogerLooPorret, ClémentClémentPorretDursap, ThomasThomasDursapAkula, AnjaniAnjaniAkulaChoudhury, SubhobrotoSubhobrotoChoudhuryDupuy, EmmanuelEmmanuelDupuyPeter, AntonyAntonyPeterJourdan, NicolasNicolasJourdanVandersmissen, KevinKevinVandersmissenMontero Alvarez, DanielDanielMontero AlvarezVrancken, EviEviVranckenSebaai, FaridFaridSebaaiPuttarame Gowda, PallaviPallaviPuttarame GowdaLai, J. G.J. G.LaiChan, BTBTChanSepulveda Marquez, AlfonsoAlfonsoSepulveda MarquezLanger, RobertRobertLangerBrems, StevenStevenBremsKoo, Il GyoIl GyoKooAltamirano Sanchez, EfrainEfrainAltamirano SanchezDevriendt, KatiaKatiaDevriendtMitard, JeromeJeromeMitardPetersen Barbosa Lima, LucasLucasPetersen Barbosa LimaSubramanian, SujithSujithSubramanianHoriguchi, NaotoNaotoHoriguchiDemuynck, StevenStevenDemuynckBiesemans, SergeSergeBiesemans2026-08-212026-08-212025979-8-3315-6786-62380-9248https://imec-publications.be/handle/20.500.12860/60084This work reports on the demonstration of a monolithic-CFET (mCFET) integrating different channels for nMOS and pMOS. We enhanced our conventional mCFET process with a (110) Si pMOS - (100) Si nMOS combination and a single film embedded middle dielectric insulator (eMDI) by means of layer transfer. Using this advanced substrate, these two new features can be integrated in any mCFET baseline with minimal modifications and reduced process complexity compared to a replacement MDI (rMDI) integration. Functional PMOS and NMOS devices featuring SiCN eMDI are reported. Key aspects related to the bonding dielectric interface and the C content in SiCN MDI are assessed.engProceedings paper10.1109/iedm50572.2025.11353866WOS:001701480300273