Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

Yamashita, YukiYukiYamashitaStoffels, SteveSteveStoffelsPosthuma, NielsNielsPosthumaGeens, KarenKarenGeensLi, XiangdongXiangdongLiFuruta, JunJunFurutaDecoutere, StefaanStefaanDecoutereKobayashi, KazutoshiKazutoshiKobayashi2021-10-272021-10-2720191349-2543https://imec-publications.be/handle/20.500.12860/34478Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI processJournal articlehttps://doi.org/10.1587/elex.16.20190516