Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETs

Rodrigues, M.M.RodriguesMartino, J.A.J.A.MartinoMercha, AbdelkarimAbdelkarimMerchaCollaert, NadineNadineCollaertSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-182021-10-1820100038-1101https://imec-publications.be/handle/20.500.12860/17888Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETsJournal article