Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm

Belmonte, AttilioAttilioBelmonteOh, HyungrockHyungrockOhSubhechha, SubhaliSubhaliSubhechhaRassoul, NouredineNouredineRassoulHody, HubertHubertHodyDekkers, HaroldHaroldDekkersDelhougne, RomainRomainDelhougneRicotti, LorenzoLorenzoRicottiBanerjee, KaustuvKaustuvBanerjeeVaisman Chasin, AdrianAdrianVaisman Chasinvan Setten, MichielMichielvan SettenPuliyalil, HarinarayananHarinarayananPuliyalilPak, MuratMuratPakTeugels, LieveLieveTeugelsTsvetanova, DianaDianaTsvetanovaVandersmissen, KevinKevinVandersmissenKundu, ShreyaShreyaKunduHeijlen, JeroenJeroenHeijlenBatuk, DmitryDmitryBatukGeypen, JefJefGeypenGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKar2022-08-252022-07-092022-08-2520212380-9248WOS:000812325400098https://imec-publications.be/handle/20.500.12860/40079Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nmProceedings paper10.1109/IEDM19574.2021.9720596978-1-6654-2572-8WOS:000812325400098