Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Wach, FilipFilipWachUren, Michael J.Michael J.UrenBakeroot, BenoitBenoitBakerootZhao, MingMingZhaoDecoutere, StefaanStefaanDecoutereKuball, MartinMartinKuball2021-10-292021-10-2920200741-3106https://imec-publications.be/handle/20.500.12860/36292Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistorsJournal articlehttps://ieeexplore.ieee.org/document/9220913