Study of Transistor Metrics for Room-Temperature Screening of Single Electron Transistors for Silicon Spin Qubit Applications

Lorenzelli, FrancescoFrancescoLorenzelliElsayed, AsserAsserElsayedGodfrin, ClementClementGodfrinGrill, AlexanderAlexanderGrillKubicek, StefanStefanKubicekLi, RoyRoyLiStucchi, MicheleMicheleStucchiWan, DannyDannyWanDe Greve, KristiaanKristiaanDe GreveMarinissen, Erik JanErik JanMarinissenGielen, GeorgesGeorgesGielen2024-05-062023-08-202023-08-282024-05-0620231530-1877WOS:001032757100005https://imec-publications.be/handle/20.500.12860/42370Study of Transistor Metrics for Room-Temperature Screening of Single Electron Transistors for Silicon Spin Qubit ApplicationsProceedings paper10.1109/ETS56758.2023.10173954979-8-3503-3634-4WOS:001032757100005Electrical & electronic engineeringDEGRADATIONtransistor, quantum, quantum dot, single electron transistor, testing, screening, room temperature