Reliability of ultra-thin gate oxide below 3 nm in the direct tunneling regime

Depas, MichelMichelDepasDegraeve, RobinRobinDegraeveNigam, TanyaTanyaNigamGroeseneken, GuidoGuidoGroesenekenHeyns, MarcMarcHeyns2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1851Reliability of ultra-thin gate oxide below 3 nm in the direct tunneling regimeJournal article