Impact of interface states on mobility and threshold voltage of Si-passivated Ge MOSFETs

Martens, KoenKoenMartensMitard, JeromeJeromeMitardLeys, FrederikFrederikLeysDe Jaeger, BriceBriceDe JaegerCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisKaczer, BenBenKaczerGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaes2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14133Impact of interface states on mobility and threshold voltage of Si-passivated Ge MOSFETsMeeting abstract