Trap spectroscopy by charge injection and sensing (TSCIS): a quantitative electrical technique for studying defects in dielectric stacks

Degraeve, RobinRobinDegraeveCho, Moon JuMoon JuChoGovoreanu, BogdanBogdanGovoreanuKaczer, BenBenKaczerZahid, MohammedMohammedZahidVan Houdt, JanJanVan HoudtJurczak, GosiaGosiaJurczakGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13642Trap spectroscopy by charge injection and sensing (TSCIS): a quantitative electrical technique for studying defects in dielectric stacksProceedings paper