On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's

Menozzi, R.R.MenozziBorgarino, M.M.Borgarinovan der Zanden, KoenKoenvan der ZandenSchreurs, DominiqueDominiqueSchreurs2021-10-142021-10-141999https://imec-publications.be/handle/20.500.12860/3668On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT'sJournal article