Selective epitaxial growth of Ge on silicon wafers with shallow trench isolation: an approach for Ge virual substrates

Wang, GangGangWangLeys, FrederikFrederikLeysSouriau, LaurentLaurentSouriauLoo, RogerRogerLooCaymax, MattyMattyCaymaxBrunco, DDBruncoGeypen, JefJefGeypenBender, HugoHugoBenderMeuris, MarcMarcMeurisVandervorst, WilfriedWilfriedVandervorstHeyns, MarcMarcHeyns2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14772Selective epitaxial growth of Ge on silicon wafers with shallow trench isolation: an approach for Ge virual substratesProceedings paper