Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals

Chai, ZhengZhengChaiMa, JigangJigangMaZhang, WeidongWeidongZhangGovoreanu, BogdanBogdanGovoreanuJi, ZhigangZhigangJiZhang, Jian FuJian FuZhangJurczak, GosiaGosiaJurczak2021-10-242021-10-2420170018-9383https://imec-publications.be/handle/20.500.12860/27998Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signalsJournal articlehttp://ieeexplore.ieee.org/document/8019848/