First demonstration of sub-12 nm gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices

Subhechha, SubhaliSubhaliSubhechhaRassoul, NouredineNouredineRassoulBelmonte, AttilioAttilioBelmonteDelhougne, RomainRomainDelhougneDonadio, Gabriele LucaGabriele LucaDonadioBanerjee, KaustuvKaustuvBanerjeeDekkers, HaroldHaroldDekkersvan Setten, MichielMichielvan SettenMao, MingMingMaoPuliyalil, HarinarayananHarinarayananPuliyalilKundu, ShreyaShreyaKunduPak, MuratMuratPakTeugels, LieveLieveTeugelsTsvetanova, DianaDianaTsvetanovaBazzazian, NinaNinaBazzazianKlijs, LarsLarsKlijsVaisman Chasin, AdrianAdrianVaisman ChasinHeijlen, JeroenJeroenHeijlenKar, Gouri SankarGouri SankarKar2021-10-312021-10-312021https://imec-publications.be/handle/20.500.12860/37215First demonstration of sub-12 nm gate last IGZO-TFTs with oxygen tunnel architecture for front gate devicesProceedings paperhttps://ieeexplore.ieee.org/document/9508749