Kandeel, AhmedAhmedKandeelKim, MinkyuMinkyuKimShahin, AmirAmirShahinDe Heyn, PeterPeterDe HeynTseng, Chih-Kuo NeilChih-Kuo NeilTsengVaskasi, Javad RahimiJavad RahimiVaskasiShimura, YosukeYosukeShimuraChakrabarti, MaumitaMaumitaChakrabartiVelenis, DimitriosDimitriosVelenisVan Thourhout, DriesDriesVan ThourhoutFerraro, FilippoFilippoFerraroBan, YoojinYoojinBanVan Campenhout, JorisJorisVan Campenhout2025-03-302025-03-302025-APR 11041-1135WOS:001448306700003https://imec-publications.be/handle/20.500.12860/45456RF Equivalent Circuit Model for GeSi Quantum Confined Stark Effect Electro-Absorption ModulatorsJournal article10.1109/LPT.2025.3549943WOS:001448306700003