Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

O'Sullivan, BarryBarryO'SullivanMitsuhashi, RiichirouRiichirouMitsuhashiPourtois, GeoffreyGeoffreyPourtoisAoulaiche, MarcMarcAoulaicheHoussa, MichelMichelHoussaVan der Heyden, NikolaasNikolaasVan der HeydenSchram, TomTomSchramHarada, YoshinaoYoshinaoHaradaGroeseneken, GuidoGuidoGroesenekenAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansNakabayashi, TakashiTakashiNakabayashiIkeda, AtsushiAtsushiIkedaNiwa, MasaakiMasaakiNiwa2021-10-172021-10-1720080021-8979https://imec-publications.be/handle/20.500.12860/14259Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodesJournal articlehttp://link.aip.org/link/?JAP/104/044512