200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration

Li, XiangdongXiangdongLiVan Hove, MarleenMarleenVan HoveZhao, MingMingZhaoGeens, KarenKarenGeensLempinen, Vesa-PekkaVesa-PekkaLempinenSormunen, JaakkoJaakkoSormunenGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-242021-10-2420170741-3106https://imec-publications.be/handle/20.500.12860/28808200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integrationJournal articlehttp://ieeexplore.ieee.org/document/7929312/