Effect of ammonium halide salts on wet chemical nanoscale etching and polishing of InGaAs surfaces for advanced CMOS devices

Samanta, SuprakashSuprakashSamantaJin, SeungwanSeungwanJinLee, Chan-HeeChan-HeeLeeLee, Seong-SooSeong-SooLeeStruyf, HerbertHerbertStruyfKim, Tae-GonTae-GonKimPark, Jin-GooJin-GooPark2023-11-062023-08-022023-11-0620231369-8001WOS:001024142600001https://imec-publications.be/handle/20.500.12860/42256Effect of ammonium halide salts on wet chemical nanoscale etching and polishing of InGaAs surfaces for advanced CMOS devicesJournal article10.1016/j.mssp.2023.107469WOS:001024142600001HYDROGEN-PEROXIDEINPREMOVALGAASSIIN0.53GA0.47ASSEMICONDUCTORSQUALITYSILICONGE