Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor

Min, JinhongJinhongMinRonchi, NicoloNicoloRonchiO'Sullivan, BarryBarryO'SullivanBanerjee, KaustuvKaustuvBanerjeeVan den Bosch, GeertGeertVan den BoschVan Houdt, JanJanVan HoudtShin, ChanghwanChanghwanShinMcMitchell, SeanSeanMcMitchell2022-03-312021-11-022022-03-302022-03-3120210741-3106WOS:000690440900010https://imec-publications.be/handle/20.500.12860/37611Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect TransistorJournal article10.1109/LED.2021.3102592WOS:000690440900010EngineeringMECHANISM