Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

Blasco, X.X.BlascoNafria, M.M.NafriaAymerich, X.X.AymerichPetry, JasmineJasminePetryVandervorst, WilfriedWilfriedVandervorst2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10107Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFMJournal article