ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

Canato, EECanatoMeneghini, M.M.MeneghiniNardo, A.A.NardoMasin, F.F.MasinBarbato, F.F.BarbatoBarbato, M.M.BarbatoStockman, ArnoArnoStockmanBanerjee, A.A.BanerjeeMoens, P.P.MoensZanoni, E.E.ZanoniMeneghesso, G.G.Meneghesso2021-10-272021-10-2720190026-2714https://imec-publications.be/handle/20.500.12860/32632ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trappingJournal article