Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices

Loo, RogerRogerLooSorada, HaruyukiHaruyukiSoradaInoue, AkiraAkiraInoueLee, B.CB.CLeeHyun, SangjinSangjinHyunJakschik, StefanStefanJakschikLujan, GuilhermeGuilhermeLujanHoffmann, Thomas Y.Thomas Y.HoffmannCaymax, MattyMattyCaymax2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12510Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devicesJournal article