Lucas, KevinKevinLucasMontgomery, PatrickPatrickMontgomeryLitt, Lloyd C.Lloyd C.LittConley, WillWillConleyPostnikov, Sergei V.Sergei V.PostnikovWu, WeiWeiWuYuan, Chi-MinChi-MinYuanOlivares, MarcMarcOlivaresStrozewski, KirkKirkStrozewskiCarter, Russell L.Russell L.CarterVasek, JamesJamesVasekSmith, DavidDavidSmithFanucchi, Eric L.Eric L.FanucchiWiaux, VincentVincentWiauxVandenberghe, GeertGeertVandenbergheToublan, OlivierOlivierToublanVerhappen, ArjanArjanVerhappenKuijten, Jan P.Jan P.Kuijtenvan Wingerden, JohannesJohannesvan WingerdenKasprowicz, Bryan S.Bryan S.KasprowiczTracy, Jeffrey W.Jeffrey W.TracyProgler, Christopher J.Christopher J.ProglerShiro, EugeneEugeneShiroTopouzov, IgorIgorTopouzovWimmer, KarlKarlWimmerRoman, Bernard J.Bernard J.Roman2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7832Process, design and optical proximity correction requirements for the 65nm device generationProceedings paper