Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Delabie, AnneliesAnneliesDelabieCaymax, MattyMattyCaymaxBellenger, FlorenceFlorenceBellengerBrammertz, GuyGuyBrammertzConard, ThierryThierryConardHoussa, MichelMichelHoussaSioncke, SonjaSonjaSionckeVan Elshocht, SvenSvenVan ElshochtHeyns, MarcMarcHeynsMeuris, MarcMarcMeurisBrunco, DavidDavidBruncovan Hemmen, J.L.J.L.van HemmenKeuning, W.W.KeuningKessels, W.M.M.W.M.M.KesselsAfanas'ev, V.V.V.V.Afanas'evStesmans, AndreAndreStesmans2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13650Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channelsMeeting abstract