Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodes

Chen, Shih-HungShih-HungChenLee, Jam-WemJam-WemLeeLinten, DimitriDimitriLintenScholz, MirkoMirkoScholzSong, Ming-HsiangMing-HsiangSongHellings, GeertGeertHellingsBoschke, RomanRomanBoschkeSibaja-Hernandez, ArturoArturoSibaja-HernandezGroeseneken, GuidoGuidoGroeseneken2021-10-222021-10-222014-12https://imec-publications.be/handle/20.500.12860/23631Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodesMeeting abstract