First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Werquin, M.M.WerquinVellas, N.N.VellasGuhel, Y.Y.GuhelDucatteau, D.D.DucatteauBoudart, B.B.BoudartPesant, J.C.J.C.PesantBougrioua, Z.Z.BougriouaGermain, MarianneMarianneGermainde Jaeger, J.C.J.C.de JaegerGaquiere, C.C.Gaquiere2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11553First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technologyJournal article