Loo, RogerRogerLooVohra, AnuragAnuragVohraPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelSchaekers, MarcMarcSchaekersCapogreco, ElenaElenaCapogrecoShimura, YosukeYosukeShimuraKohen, DavidDavidKohenTolle, JohnJohnTolleVandervorst, WilfriedWilfriedVandervorst2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33475Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devicesOral presentation