VFTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires

Chen, Shih-HungShih-HungChenLinten, DimitriDimitriLintenHellings, GeertGeertHellingsVeloso, AnabelaAnabelaVelosoScholz, MirkoMirkoScholzBoschke, RomanRomanBoschkeGroeseneken, GuidoGuidoGroesenekenCollaert, NadineNadineCollaertHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26435VFTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowiresProceedings paperhttp://ieeexplore.ieee.org/document/7592555/?tp=&arnumber=7592555