Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy

McNally, P. J.P. J.McNallyCurley, J. W.J. W.CurleyBolt, M.M.BoltReader, A.A.ReaderTuomi, T.T.TuomiRantamaki, R.R.RantamakiDanilewsky, A. N.A. N.DanilewskyDe Wolf, IngridIngridDe Wolf2021-10-142021-10-141999https://imec-publications.be/handle/20.500.12860/3665Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopyJournal article