Monolithically integrated coplanar stripline and InAlAs/InGaAs modulation-doped field-effect transistors with 4.2 ps switching time and 3.2 ps delay

Zeng, A.A.ZengJackson, M. K.M. K.JacksonVan Hove, MarleenMarleenVan HoveDe Raedt, WalterWalterDe Raedt2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/1040Monolithically integrated coplanar stripline and InAlAs/InGaAs modulation-doped field-effect transistors with 4.2 ps switching time and 3.2 ps delayProceedings paper