Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures

Martino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/757Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperaturesProceedings paper