Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

Jiang, SijiaSijiaJiangMerckling, ClementClementMercklingMoussa, AlainAlainMoussaGuo, WeimingWeimingGuoWaldron, NiamhNiamhWaldronCollaert, NadineNadineCollaertBarla, KathyKathyBarlaCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorstSeefeldt, MarcMarcSeefeldtHeyns, MarcMarcHeyns2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24012Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substratesProceedings paperhttp://ecst.ecsdl.org/content/64/6/501.abstract