High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

Ramesh, AnishaAnishaRameshBerger, PaulPaulBergerLoo, RogerRogerLoo2021-10-202021-10-202012-020003-6951https://imec-publications.be/handle/20.500.12860/21376High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor depositionJournal article