Significant reduction of positive bias temperature instability in high-k/metal-gate nFETs by incorporation of rare earth metals

Kaczer, BenBenKaczerVeloso, AnabelaAnabelaVelosoAoulaiche, MarcMarcAoulaicheGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-172009-060167-9317https://imec-publications.be/handle/20.500.12860/15559Significant reduction of positive bias temperature instability in high-k/metal-gate nFETs by incorporation of rare earth metalsJournal article