Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface

Lukyanchikova, N. B.N. B.LukyanchikovaPetrichuk, M. V.M. V.PetrichukGarbar, N. P.N. P.GarbarSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-142021-10-141999https://imec-publications.be/handle/20.500.12860/3637Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interfaceJournal article