Wang, WenfeiWenfeiWangDerluyn, JoffJoffDerluynGermain, MarianneMarianneGermainDe Wolf, IngridIngridDe WolfLeys, MaartenMaartenLeysBoeykens, StevenStevenBoeykensDegroote, StefanStefanDegrooteRuythooren, WouterWouterRuythoorenDas, JohanJohanDasSchreurs, DominiqueDominiqueSchreursNauwelaers, BartBartNauwelaersBorghs, GustaafGustaafBorghs2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11540Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructureProceedings paper