Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide

Tyaginov, StanislavStanislavTyaginovMakarov, AlexanderAlexanderMakarovJech, MarkusMarkusJechVexler, MikhailMikhailVexlerFranco, JacopoJacopoFrancoKaczer, BenBenKaczerGrasser, TiborTiborGrasser2021-10-262021-10-262018-021063-7826https://imec-publications.be/handle/20.500.12860/31986Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structuresJournal articlehttps://doi.org/10.1134/S1063782618020203