Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures

Yu, HaoHaoYuPutcha, VamsiVamsiPutchaPeralagu, UthayasankaranUthayasankaranPeralaguZhao, MingMingZhaoYadav, SachinSachinYadavAlian, AlirezaAlirezaAlianParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2022-08-312022-08-222022-08-242022-08-312022-12-280021-8979WOS:000840823900008https://imec-publications.be/handle/20.500.12860/40287Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructuresJournal article10.1063/5.0076243WOS:000840823900008Electrical & electronic engineeringGANALN