Lanza, MarioMarioLanzaWaser, RainerRainerWaserIelmini, DanieleDanieleIelminiYang, J. JoshuaJ. JoshuaYangGoux, LudovicLudovicGouxSune, JordiJordiSuneKenyon, Anthony JosephAnthony JosephKenyonMehonic, AdnanAdnanMehonicSpiga, SabinaSabinaSpigaRana, VikasVikasRanaWiefels, StefanStefanWiefelsMenzel, StephanStephanMenzelValov, IliaIliaValovVillena, Marco A.Marco A.VillenaMiranda, EnriqueEnriqueMirandaJing, XuXuJingCampabadal, FrancescaFrancescaCampabadalGonzalez, Mireia B.Mireia B.GonzalezAguirre, FernandoFernandoAguirrePalumbo, FelixFelixPalumboZhu, KaichenKaichenZhuRoldan, Juan BautistaJuan BautistaRoldanPuglisi, Francesco MariaFrancesco MariaPuglisiLarcher, LucaLucaLarcherHou, Tuo-HungTuo-HungHouProdromakis, ThemisThemisProdromakisYang, YuchaoYuchaoYangHuang, PengPengHuangWan, TianqingTianqingWanChai, YangYangChaiPey, Kin LeongKin LeongPeyRaghavan, NagarajanNagarajanRaghavanDuenas, SalvadorSalvadorDuenasWang, TaoTaoWangXia, QiangfeiQiangfeiXiaPazos, SebastianSebastianPazos2023-08-042023-06-202023-08-0420211936-0851WOS:000747115200012https://imec-publications.be/handle/20.500.12860/41921Standards for the Characterization of Endurance in Resistive Switching DevicesJournal article review10.1021/acsnano.1c06980WOS:000747115200012NONVOLATILE MEMORYGRAPHENE OXIDEHIGH-PERFORMANCERESISTANCE MEMORYMEMRISTORBIPOLARRERAMRRAMMEMTRANSISTORSSUBSTRATEMEDLINE:34730935