Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: process window versus complexity

Augendre, EmmanuelEmmanuelAugendreRooyackers, RitaRitaRooyackersCaymax, MattyMattyCaymaxVandamme, EwoutEwoutVandammeDe Keersgieter, AnAnDe KeersgieterPerello, CarlesCarlesPerelloVan Dievel, MarcMarcVan DievelPochet, SandrineSandrinePochetBadenes, GonçalGonçalBadenes2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4077Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: process window versus complexityJournal article