Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

Toledano Luque, MariaMariaToledano LuqueKaczer, BenBenKaczerAoulaiche, MarcMarcAoulaicheSpessot, AlessioAlessioSpessotRoussel, PhilippePhilippeRousselRitzenthaler, RomainRomainRitzenthalerSchram, TomTomSchramThean, AaronAaronTheanGroeseneken, GuidoGuidoGroeseneken2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/23174Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging componentsMeeting abstract