Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors

Houssa, MichelMichelHoussaDe Gendt, StefanStefanDe GendtAutran, J.L.J.L.AutranGroeseneken, GuidoGuidoGroesenekenHeyns, MarcMarcHeyns2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9062Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistorsJournal article