Investigation of properties of SiO2 defects created during electric stressing at different temperatures

Kaczer, BenBenKaczerDegraeve, RobinRobinDegraevePangon, NadègeNadègePangonGroeseneken, GuidoGuidoGroeseneken2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3545Investigation of properties of SiO2 defects created during electric stressing at different temperaturesOral presentation