Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement

Cheng, KaiKaiChengLeys, MaartenMaartenLeysDekoster, JohanJohanDekosterDegroote, StefanStefanDegroote2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16854Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurementOral presentation